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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition

Cited 8 times inthomson ciCited 5 times inthomson ci
Title
The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition
Author
Kim, HJNa, HKwon, Soon-YongSeo, HCKim, HJShin, YLee, KHKim, YWYoon, SOh, HJSone, CPark, YCho, YHSun, YPYoon, E
Keywords
Capping layer; Emission peaks; GaN buffer layers; Growth conditions; Photoluminescence emission; Single quantum well; Single quantum well structures; Well thickness
Issue Date
2003
Publisher
Wiley-VCH Verlag
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.0, no.7, pp.2834 - 2837
Abstract
In-rich InGaN/GaN single quantum wells were grown by metalorganic chemical vapor deposition for the first time to the best of our knowledge. The structures consist of a 2-μm thick GaN buffer layer, a 2-nm thick In-rich InGaN single quantum well, and a 20 nm thick GaN capping layer. Single quantum well structures were examined by transmission electron microscopy. Photoluminescence emissions from the single quantum well samples were observed at wavelengths ranged from 400 nm to 500 nm depending upon the growth conditions of the InN layer. From a simple energy level calculation, we found the possibility of extremely large emission peak shift with well thickness.
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DOI
10.1002/pssc.200303398
ISSN
1862-6351
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MSE_Journal Papers
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