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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Effect of growth interruption on In-rich InGaN/GaN single quantum well structures

Cited 16 times inthomson ciCited 7 times inthomson ci
Title
Effect of growth interruption on In-rich InGaN/GaN single quantum well structures
Author
Kwon, Soon-YongKim, HJNa, HSeo, HCKim, HJShin, YKim, YWYoon, SOh, HJSone, CPark, YSun, YPCho, YHYoon, E
Keywords
Cross-sectional TEM; Dislocation densities; Growth interruption; High growth temperatures; Mass-transport process; Quantum well structures; Single quantum well structures; Structural measurements
Issue Date
2003-05
Publisher
Wiley-VCH Verlag
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.0, no.7, pp.2830 - 2833
Abstract
We successfully grew In-rich InGaN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. Relatively high growth temperature (730 °C) for InGaN layer facilitated the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InGaN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the In-rich InGaN layer thickness reduced from 2.5 nm (without GI) to about 1 nm (with 10 s GI) and the InGaN/GaN interface became very flat with 10 s GI. We suggest that decomposition and mass transport processes on InGaN during GI is responsible for these phenomena.
URI
https://scholarworks.unist.ac.kr/handle/201301/6568
DOI
10.1002/pssc.200303451
ISSN
1862-6351
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MSE_Journal Papers
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