Effect of growth interruption on In-rich InGaN/GaN single quantum well structures
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- Effect of growth interruption on In-rich InGaN/GaN single quantum well structures
- Kwon, Soon-Yong; Kim, HJ; Na, H; Seo, HC; Kim, HJ; Shin, Y; Kim, YW; Yoon, S; Oh, HJ; Sone, C; Park, Y; Sun, YP; Cho, YH; Yoon, E
- Cross-sectional TEM; Dislocation densities; Growth interruption; High growth temperatures; Mass-transport process; Quantum well structures; Single quantum well structures; Structural measurements
- Issue Date
- Wiley-VCH Verlag
- Physica Status Solidi (C) Current Topics in Solid State Physics, v.0, no.7, pp.2830 - 2833
- We successfully grew In-rich InGaN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. Relatively high growth temperature (730 °C) for InGaN layer facilitated the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InGaN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the In-rich InGaN layer thickness reduced from 2.5 nm (without GI) to about 1 nm (with 10 s GI) and the InGaN/GaN interface became very flat with 10 s GI. We suggest that decomposition and mass transport processes on InGaN during GI is responsible for these phenomena.
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