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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

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Title
Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties
Author
Kim, HJKwon, Soon-YongYim, SNa, HKee, BYoon, EKim, JPark, SHJeon, HKim, SSeo, JHPark, KSeon, MSSone, CNam, OHPark, Y
Keywords
Ammonia preheater; Epitaxy; GaN; MOCVD; Nitride semiconductor
Issue Date
2003-06
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.3, no.4, pp.351 - 354
Abstract
GaN epitaxial layers were grown by metalorganic chemical vapor deposition with preheated ammonia as a group V source. The growth rates of GaN epilayers were little affected when ammonia preheater temperature was varied from room temperature to 1000 degreesC, however, their electrical properties as well as source materials utilization efficiency was significantly improved by using preheated ammonia. GaN epilayers grown with preheated ammonia showed excellent structural and optical properties.
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DOI
10.1016/S1567-1739(02)00224-9
ISSN
1567-1739
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MSE_Journal Papers
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