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Effect of growth interruption on In-rich InGaN/GaN single quantum well structures File

Kwon, Soon-Yong , Kim, HJ , Na, H , Seo, HC , Shin, Y , Kim, YW , Yoon, S , Oh, HJ , Sone, C , Park, Y , et al

Article Issue Date2003-05 View122
Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties File

Kim, HJ , Kwon, Soon-Yong , Yim, S , Na, H , Kee, B , Yoon, E , Kim, J , Park, SH , Jeon, H , Kim, S , et al

Article Issue Date2003-06 View134
Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition File

Kim, HJ , Na, H , Kwon, Soon-Yong , Seo, HC , Shin, Y , Lee, KH , Kim, DH , Oh, HJ , Yoon, S , Sone, C , et al

Article Issue Date2004-08 View119
The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition File

Na, H , Kim, HJ , Kwon, Soon-Yong , Sone, C , Park, Y , Yoon, E

Article Issue Date2004-09 View98
The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition File

Kim, HJ , Na, H , Kwon, Soon-Yong , Seo, HC , Shin, Y , Lee, KH , Kim, YW , Yoon, S , Oh, HJ , Sone, C , et al

Article Issue Date2003 View136
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