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Showing results 1 to 7 of 7

Issue DateTitleAuthor(s)TypeView
2004Ballistic electron emission microscopy study of p-type 4H-SiCDing, Y; Park, Kibog; Pelz, JP; Los, AV; Mazzola, MSARTICLE719
2004-07Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopyDing, Y; Park, Kibog; Pelz, JP; Palle, KC; Mikhov, MK; Skromme, BJARTICLE685
2005-05Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiCPark, Kibog; Ding, Y; Pelz, JP; Mikhov, MK; Wang, Y; Skromme, BJARTICLE772
2005-12Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopyPark, Kibog; Pelz, JP; Grim, J; Skowronski, MARTICLE735
2004-01Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopyDing, Y; Park, Kibog; Pelz, JP; Palle, KC; Mikhov, MK; Skromme, BJ; Meidia, H; Mahajan, SARTICLE582
2003-12Simulations of denuded-zone formation during growth on surfaces with anisotropic diffusionEbner, C; Park, Kibog; Nielsen, JF; Pelz, JPARTICLE676
2010-03-15Strong hot electron reflection from subsurface 8H-SiC inclusion in 4H-SiC: Ballistic Electron Emission Microscopy (BEEM) studyPark, Kibog; Cai, W; Pelz, JP; Miao, MS; Lambrecht, WRL; Zhang, X; Skowronski, M; Capano, MACONFERENCE50
Showing results 1 to 7 of 7

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