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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Ballistic electron emission microscopy study of p-type 4H-SiC

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Title
Ballistic electron emission microscopy study of p-type 4H-SiC
Author
Ding, YPark, KibogPelz, JPLos, AVMazzola, MS
Keywords
Ballistic electron emission microscopy; Fermi level pinning; Image force lowering; Interfacial oxide layer; Schottky barrier; SiC
Issue Date
2004
Publisher
TRANS TECH PUBLICATIONS LTD
Citation
MATERIALS SCIENCE FORUM, v.457-460, no., pp.1077 - 1080
Abstract
Ballistic electron emission microscopy (BEEM) measurements have been performed on Pt/p-type 4H-SiC Schottky contacts to probe the metal/semiconductor (M/S) interface and the valence band structure of the semiconductor. The Schottky barrier height (SBH) is found to be 1.45 eV, compared with 1.55 eV for Pt on n-type 4H-SiC measured under identical conditions with BEEM. A second threshold is also observed in the BEEM spectrum on Pt/p-type 4H-SiC contacts, which is possibly related to a lower-energy valence band. The sum of the measured p-type and n-type SBH's is slightly less than the 4H-SiC bandgap, which suggests the existence of an interfacial oxide layer and rather weak Fermi level pinning, consistent with prior measurements of SBH vs. metal work function.
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DOI
10.4028/www.scientific.net/MSF.457-460.1077
ISSN
0255-5476
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PHY_Journal Papers
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