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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy

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Title
Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy
Author
Ding, YPark, KibogPelz, JPPalle, KCMikhov, MKSkromme, BJ
Keywords
Ballistic electron emission microscopy (BEEM); Conduction band minimum (CBM); Schottky barrier height (SBH); Topographic depressions
Issue Date
2004-07
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.4, pp.1351 - 1355
Abstract
Using ballistic electron emission microscopy (BEEM), high-temperature- processing-induced 'double-stacking fault' cubic inclusions in 4H-Si-C were studied. BEEM is a three-terminal extension of scanning tunneling microscopy (STM) that can probe the local electronic transport properties of M/S interfaces with nanometer-scale spatial resolution and <10 meV energy resolution. It was found that measured spatial variations in the BEEM current were related to the inclusion orientation and local surface step structure. The observation of anomalously low schottky barrier height (SBH) suggested the existence of a triple-or quadruple-stacking fault inclusion.
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DOI
10.1116/1.1705644
ISSN
0734-2101
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PHY_Journal Papers
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