Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy
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- Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy
- Ding, Y; Park, Kibog; Pelz, JP; Palle, KC; Mikhov, MK; Skromme, BJ
- Ballistic electron emission microscopy (BEEM); Conduction band minimum (CBM); Schottky barrier height (SBH); Topographic depressions
- Issue Date
- A V S AMER INST PHYSICS
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.22, no.4, pp.1351 - 1355
- Using ballistic electron emission microscopy (BEEM), high-temperature- processing-induced 'double-stacking fault' cubic inclusions in 4H-Si-C were studied. BEEM is a three-terminal extension of scanning tunneling microscopy (STM) that can probe the local electronic transport properties of M/S interfaces with nanometer-scale spatial resolution and <10 meV energy resolution. It was found that measured spatial variations in the BEEM current were related to the inclusion orientation and local surface step structure. The observation of anomalously low schottky barrier height (SBH) suggested the existence of a triple-or quadruple-stacking fault inclusion.
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