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- Park, Kibog
- Emergent Materials & Devices Lab.
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Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy
- Author(s)
- Ding, Y, Park, Kibog, Pelz, JP, Palle, KC, Mikhov, MK, Skromme, BJ, Meidia, H, Mahajan, S
- Issued Date
- 2004-01
- Citation
- PHYSICAL REVIEW B, v.69, no.4, pp.1 - 4
- Abstract
- High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.
- Publisher
- AMERICAN PHYSICAL SOC
- ISSN
- 2469-9950
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