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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

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Title
Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy
Author
Ding, YPark, KibogPelz, JPPalle, KCMikhov, MKSkromme, BJMeidia, HMahajan, S
Keywords
BAND-STRUCTURE; STACKING-FAULTS; STRUCTURAL DEFECTS; SCHOTTKY BARRIERS; SILICON-CARBIDE; TRANSFORMATION; INTERFACES; TRANSPORT; POLYTYPES; OXIDATION
Issue Date
2004-01
Publisher
AMERICAN PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.69, no.4, pp.1 - 4
Abstract
High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53 ± 0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.
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DOI
10.1103/PhysRevB.69.041305
ISSN
2469-9950
Appears in Collections:
PHY_Journal Papers
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