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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC

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Title
Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC
Author
Park, KibogDing, YPelz, JPMikhov, MKWang, YSkromme, BJ
Issue Date
2005-05
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.86, no.22, pp.1 - 3
Abstract
Finite-element calculations of Schottky diode capacitance-voltage (C-V) curves show that an array of subsurface inclined quantum wells (QWs) produce negligible change in shape and slope of C-V curves, but significantly reduce the intercept voltage. This is particularly important for hexagonal SiC, in which current- or process-induced cubic inclusions are known to behave as electron QWs. These calculations naturally explain the surprisingly large effect of cubic inclusions on the apparent 4H-SiC Schottky barrier determined by C-V measurements, and together with the measured C-V data indicate the QW subband energy in the inclusions to be ~0.51 eV below the host 4H-SiC conduction band.
URI
https://scholarworks.unist.ac.kr/handle/201301/10072
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=20844455721
DOI
10.1063/1.1935757
ISSN
0003-6951
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PHY_Journal Papers
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