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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy

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Title
Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy
Author
Park, KibogPelz, JPGrim, JSkowronski, M
Keywords
Ballistic electron emission spectroscopy (BEES); Crystal faces; Energy depth
Issue Date
2005-12
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.87, no.23, pp.1 - 3
Abstract
We show that "single" stacking fault 3C inclusions formed in 4H-SiC p-i-n diodes behave as electron quantum wells (QWs) with the QW energy depth of ∼0.25 eV below 4H-SiC conduction band minimum, by measuring the Schottky barriers on and away from inclusions with ballistic electron emission microscopy (BEEM). The Schottky barrier on the 4H area ([11-20] oriented) is measured to be essentially the same as (0001) plane studied previously, indicating that the interface pinning effects on both crystal faces are almost identical. Additionally, BEEM current amplitude is observed to be very sensitive to subsurface damage induced by polishing.
URI
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DOI
10.1063/1.2138442
ISSN
0003-6951
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SNS_Journal Papers
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