사진

Jeong, Hongsik (정홍식)

Department
신소재공학과
Lab
Future Semiconductor Technology Lab. (미래 반도체 연구실)
Research Keywords
메모리 소자, AI 소자, 반도체 공정, 신메모리, 반도체, 멤리스터, Semiconductor, Memristor
Research Interests
미래 반도체 연구실은 More Moore와 More Than Moore 관련 원천 기술 연구 그리고 반도체 소재/부품/장비 기술 지원 연구를 통한 원천 연구와 개발된 기술의 산업화에 기여하는 것이 목표임
○ More Moore- 고유전 소재, 저유전 소재 연구 개발- 2D 소재를 이용한 반도체 소자의 극한 Scaling 연구- 적층형 차세대 반도체 소자 연구○ More Than Moore- 차세대 Memristor 소자 연구- Memristor 기반 AI Chip 연구○ 반도체 소재/부품/장비 기술 지원- 반도체 소재 국산화 및 원천 기술 지원으로 반도체 산업의 지속 발전에 기여- Test BED 구축 및 기술 지원
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2019-05Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network TrainingLee, Jung-Hoon; Jeong, Hongsik; Lim, Dong-Hyeok, et alARTICLE206 Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training
2019-01Memristor devices for neural networksJeong, Hongsik; Shi, LupingARTICLE168 Memristor devices for neural networks
2017-04Evolution of crystal structures in GeTe during phase transitionJeong, Kwangsik; Park, Seungjong; Park, Dambi, et alARTICLE143 Evolution of crystal structures in GeTe during phase transition
2017-03Effect of number of laser pulses on p(+)/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealingJung, Sang Min; Park, Chul Jin; Jeong, Hongsik, et alARTICLE133 Effect of number of laser pulses on p(+)/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing
2016-09Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)An, J. S.; Choi, C. M.; Shindo, Y., et alARTICLE144 Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)
2016-08Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cellsKwon, Yongwoo; Park, Byoungnam; Yang, Heesun, et alARTICLE136 Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells
2016-01Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step processPark, Dambi; Park, Sungjin; Jeong, Kwangsik, et alARTICLE142 Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process
2015-10Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 NanowiresPark, Sungjin; Park, Dambi; Jeong, Kwangsik, et alARTICLE143 Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires
2015-09Evolution of the surface state in Bi2Se2Te thin films during phase transitionChoi, Hyejin; Kim, Tae Hyeon; Chae, Jimin, et alARTICLE134 Evolution of the surface state in Bi2Se2Te thin films during phase transition
2015-09Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor depositionChae, Eulyong; Lee, Kyumin; Lee, Hwan, et alARTICLE153 Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition
2015-09Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge-Te bonding in the crystallization mechanismPark, Seung Jong; Park, Hanjin; Jang, Moon Hyung, et alARTICLE136 Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge-Te bonding in the crystallization mechanism
2015-05Emulation of spike-timing dependent plasticity in nano-scale phase change memoryKang, Dae-Hwan; Jun, Hyun-Goo; Ryoo, Kyung-Chang, et alARTICLE133 Emulation of spike-timing dependent plasticity in nano-scale phase change memory
2015-02Ultrafast phase change and long durability of BN-incorporated GeSbTeJang, Moon Hyung; Park, Seung Jong; Ahn, Min, et alARTICLE138 Ultrafast phase change and long durability of BN-incorporated GeSbTe
2012-07Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power ApplicationRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun, et alARTICLE149 Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application
2012-06Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament ControllabilityRyoo, Kyung-Chang; Kim, Sungjun; Oh, Jeong-Hoon, et alARTICLE134 Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability
2012-04Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory StructureRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun, et alARTICLE150 Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure
2012-04Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching CharacteristicsRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun, et alARTICLE146 Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics
2012-02Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memoryKang, Dae-Hwan; Kim, Nan Young; Jeong, Hongsik, et alARTICLE143 Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
2012-02Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory DevicesLee, Kong-Soo; Han, Jae-Jong; Lim, Hanjin, et alARTICLE120 Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices
2011-06Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materialsBorisenko, Konstantin B.; Chen, Yixin; Cockayne, David J. H., et alARTICLE158 Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials

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