사진

Jeong, Hongsik (정홍식)

Department
School of Materials Science and Engineering(신소재공학부)
Research Interests
신메모리 소자 제작 및 특성 연구, 상변이 메모리와 자성 메모리를 활용한 Processing In Memory 기술 연구, 신메모리 소자를 이용한 인공 지능 소자 연구
Lab
반도체 및 인공지능 소자 연구실
Website
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Issue DateTitleAuthor(s)TypeViewAltmetrics
2019-05Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network TrainingLee, Jung-Hoon; Jeong, Hongsik; Lim, Dong-Hyeok, et alARTICLE160 Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training
2019-01Memristor devices for neural networksJeong, Hongsik; Shi, LupingARTICLE120 Memristor devices for neural networks
2017-04Evolution of crystal structures in GeTe during phase transitionJeong, Kwangsik; Park, Seungjong; Park, Dambi, et alARTICLE119 Evolution of crystal structures in GeTe during phase transition
2017-03Effect of number of laser pulses on p(+)/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealingJung, Sang Min; Park, Chul Jin; Jeong, Hongsik, et alARTICLE107 Effect of number of laser pulses on p(+)/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing
2016-09Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)An, J. S.; Choi, C. M.; Shindo, Y., et alARTICLE114 Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)
2016-08Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cellsKwon, Yongwoo; Park, Byoungnam; Yang, Heesun, et alARTICLE111 Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells
2016-01Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step processPark, Dambi; Park, Sungjin; Jeong, Kwangsik, et alARTICLE110 Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process
2015-10Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 NanowiresPark, Sungjin; Park, Dambi; Jeong, Kwangsik, et alARTICLE114 Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires
2015-09Evolution of the surface state in Bi2Se2Te thin films during phase transitionChoi, Hyejin; Kim, Tae Hyeon; Chae, Jimin, et alARTICLE107 Evolution of the surface state in Bi2Se2Te thin films during phase transition
2015-09Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor depositionChae, Eulyong; Lee, Kyumin; Lee, Hwan, et alARTICLE122 Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition
2015-09Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge-Te bonding in the crystallization mechanismPark, Seung Jong; Park, Hanjin; Jang, Moon Hyung, et alARTICLE108 Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge-Te bonding in the crystallization mechanism
2015-05Emulation of spike-timing dependent plasticity in nano-scale phase change memoryKang, Dae-Hwan; Jun, Hyun-Goo; Ryoo, Kyung-Chang, et alARTICLE96 Emulation of spike-timing dependent plasticity in nano-scale phase change memory
2015-02Ultrafast phase change and long durability of BN-incorporated GeSbTeJang, Moon Hyung; Park, Seung Jong; Ahn, Min, et alARTICLE111 Ultrafast phase change and long durability of BN-incorporated GeSbTe
2012-07Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power ApplicationRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun, et alARTICLE119 Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application
2012-06Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament ControllabilityRyoo, Kyung-Chang; Kim, Sungjun; Oh, Jeong-Hoon, et alARTICLE105 Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability
2012-04Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory StructureRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun, et alARTICLE121 Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure
2012-04Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching CharacteristicsRyoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun, et alARTICLE117 Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics
2012-02Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memoryKang, Dae-Hwan; Kim, Nan Young; Jeong, Hongsik, et alARTICLE116 Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
2012-02Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory DevicesLee, Kong-Soo; Han, Jae-Jong; Lim, Hanjin, et alARTICLE98 Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices
2011-06Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materialsBorisenko, Konstantin B.; Chen, Yixin; Cockayne, David J. H., et alARTICLE126 Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials

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