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- Kim, Soo-Hyun
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Interfacial Adhesion Energy of Ru-AlO Thin Film Deposited by Atomic Layer Deposition between Cu and SiO2: Effect of the Composition of Ru-AlO Thin Film
- Author(s)
- Kim, Jeong-Kyu, Cheon, Tae-Hoon, Kim, Soo-Hyun, Park, Young-Bae
- Issued Date
- 2012-05
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.5, pp.05EB04
- Abstract
- The effect of the composition of Ru-AlO thin films on the interfacial adhesion energy of an Ru-AlO thin film deposited by atomic layer deposition (ALD) between Cu and SiO2, which is a potential candidate for a Cu direct-plateable diffusion barrier, was evaluated using a four-point bending test. The interfacial adhesion energy increased with increasing AlOx content in the Ru-AlO thin films. The results were quantitatively correlated with the interfacial chemical bonding characteristics analyzed by X-ray photoemission spectroscopy, which showed that the adhesion energy is closely related to the formation of strong Al-O-Si bonds at film/substrate interfaces. (C) 2012 The Japan Society of Applied Physics
- Publisher
- IOP PUBLISHING LTD
- ISSN
- 0021-4922
- Keyword
- DIFFUSION BARRIER, INTERCONNECTS, RUTHENIUM, ELECTRODEPOSITION, INTEGRATION, FRACTURE, TSV
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