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- Kim, Soo-Hyun
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 5 | - |
| dc.citation.startPage | 05EB04 | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 51 | - |
| dc.contributor.author | Kim, Jeong-Kyu | - |
| dc.contributor.author | Cheon, Tae-Hoon | - |
| dc.contributor.author | Kim, Soo-Hyun | - |
| dc.contributor.author | Park, Young-Bae | - |
| dc.date.accessioned | 2023-12-22T05:08:50Z | - |
| dc.date.available | 2023-12-22T05:08:50Z | - |
| dc.date.created | 2023-01-19 | - |
| dc.date.issued | 2012-05 | - |
| dc.description.abstract | The effect of the composition of Ru-AlO thin films on the interfacial adhesion energy of an Ru-AlO thin film deposited by atomic layer deposition (ALD) between Cu and SiO2, which is a potential candidate for a Cu direct-plateable diffusion barrier, was evaluated using a four-point bending test. The interfacial adhesion energy increased with increasing AlOx content in the Ru-AlO thin films. The results were quantitatively correlated with the interfacial chemical bonding characteristics analyzed by X-ray photoemission spectroscopy, which showed that the adhesion energy is closely related to the formation of strong Al-O-Si bonds at film/substrate interfaces. (C) 2012 The Japan Society of Applied Physics | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.5, pp.05EB04 | - |
| dc.identifier.doi | 10.1143/JJAP.51.05EB04 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.scopusid | 2-s2.0-84861512771 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64148 | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.51.05EB04 | - |
| dc.identifier.wosid | 000305797900010 | - |
| dc.language | 영어 | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Interfacial Adhesion Energy of Ru-AlO Thin Film Deposited by Atomic Layer Deposition between Cu and SiO2: Effect of the Composition of Ru-AlO Thin Film | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | DIFFUSION BARRIER | - |
| dc.subject.keywordPlus | INTERCONNECTS | - |
| dc.subject.keywordPlus | RUTHENIUM | - |
| dc.subject.keywordPlus | ELECTRODEPOSITION | - |
| dc.subject.keywordPlus | INTEGRATION | - |
| dc.subject.keywordPlus | FRACTURE | - |
| dc.subject.keywordPlus | TSV | - |
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