2016-06 | A brief review on relaxor ferroelectrics and selected issues in lead-free relaxors | Ahn, Chang Won; Hong, Chang-Hyo; Choi, Byung-Yul; Kim, Hwang-Phil; Han, Hyoung-Su; Hwang, Younghun; Jo, Wook; Wang, Ke; Li, Jing-Feng; Lee, Jae-Shin; Kim, Ill Won | ARTICLE | 508 |
2009-10 | A Study on the Magneto-optical Properties and Application of Diluted Magnetic Semiconductor Cd1 − xMnxTe | Hwang, Younghun; Um, Young-Ho; Cho, Sung-Lae | ARTICLE | 296 |
2017-11-22 | An Exemplary Strategy Making Lead-Free Piezoceramics Truly Alternative to PZTs | Kim, Hwang-Pill; Ahn, Chang Won; Hwang, Younghun; Lee, Ho-Yong; Jo, Wook | CONFERENCE | 15 |
2010-06 | Composition-dependent Magnetic Properties of Si1-xMnx (0.1 < x < 0.9) Single Crystals | Hwang, Younghun; Um, Youngho; Park, Hyo-yeol | ARTICLE | 290 |
2013-06 | Controlling Ferromagnetic Easy Axis in a Layered MoS2 Single Crystal | Han, Sang Wook; Hwang, Younghun; Kim, Seon-Ho; Yun, Won Seok; Lee, J. D.; Park, Min Gyu; Ryu, Sunmin; Park, Ju Sang; Yoo, Dae-Hwang; Yoon, Sang-Pil; Hong, Soon Cheol; Kim, Kwang S.; Park, Young S. | ARTICLE | 658 |
2004-03 | Crystal Growth and Optical Properties of Cd1-x-yMnxZnyTe Diluted Magnetic Semiconductors | Jeong, Inho; Hwang, Younghun; Um, Youngho; Jeen, Gwangsoo | ARTICLE | 272 |
2004-06 | Dependence of indices of refraction on Mn composition of Zn1–xMnxSe thin films using prism coupler technique | Um, YH; Hwang, Younghun; Peiris, FC; Furdyna, JK | ARTICLE | 209 |
2014-03 | Effects of temperature-induced stress on the structural, electrical, and optical properties of ZnO:Ga thin films grown on Si substrates | Hwang, Younghun; Park, Seungmin; Kang, Manil; Um, Youngho | ARTICLE | 237 |
2016-12 | Electron beam-formed ferromagnetic defects on MoS2 surface along 1T phase transition | Han, Sang Wook; Park, Youngsin; Hwang, Younghun; Jekal, Soyoung; Kang, Manil; Lee, Wang G.; Yang, Woochul; Lee, Gun-Do; Hong, Soon Cheol | ARTICLE | 484 |
2011-03 | Electron mediated/enhanced ferromagnetism in a hydrogen-annealed Mn:Ge magnetic semiconductor | Dung, Dang Duc; Yun, Won; Hwang, Younghun; Feng, Wuwei; Hong, Soon Cheol; Cho, Sunglae | ARTICLE | 292 |
2015-07 | Electronic and optical properties in ZnO:Ga thin films induced by substrate stress | Hwang, Younghun; Ahn, Heejin; Kang, Manil; Um, youngho; Park, Hyoyeol | ARTICLE | 329 |
2004-06 | EPR Lineshape and g-Factor of the Single Crystal MnxSi1-x | Son, Phil Kook; Hwang, Younghun; Heo, Kyong Chan; Kim, Hung Cheol; Ok, Chi Il; Um, Young Ho; Kim, Jang Whan | ARTICLE | 321 |
2011 | Excitation‐Power Dependence of the Near Band‐Edge PL Spectra of CdMnTe with High Mn Concentrations | Hwang, Younghun; Um, Youngho; Park, Hyoyeol | ARTICLE | 232 |
2009-04 | Ferrimagnetism in strained Fe2As thin films on Si(001) | Hwang, Younghun; Choi, Jeongyong; Cho, Sunglae; Ketterson, John B.; Tsai, C-C | ARTICLE | 333 |
2009-04 | Ferromagnetic behavior of CdMnCrTe quaternary system | Shen, S; Liu, X; Cho, Y. J.; Furdyna, J. K.; Dobrowolska, M; Hwang, Younghun; Um, Y. H. | ARTICLE | 315 |
2009-01 | Ferromagnetic ordering in Mn induced by thermal strain | Hwang, Younghun; Choi,Jeongyong; Hong, Soon Cheol; Cho, Sunglae; Han, Suk-Hee; Shin, Kyung-Ho; Jung, Myung-Wha | ARTICLE | 344 |
2017-01 | Forced electrostriction by constraining polarization switching enhances the electromechanical strain properties of incipient piezoceramics | Ahn, Chang Won; Choi, Gangho; Kim, Ill Won; Lee, Jae-Shin; Wang, Ke; Hwang, Younghun; Jo, Wook | ARTICLE | 662 |
2013-04 | Formation and ferromagnetic properties of FeSi thin films | Shin, Yooleemi; Tuan, Douong Anh; Hwang, Younghun; Cuong, Tran Viet; Cho, Sunglae | ARTICLE | 440 |
2007-12 | Giant Faraday rotation in Cd1–xMnxTe (0 < x < 0.82) crystals | Hwang, Younghun; Chung, Soo-seong; Um, Youngho | ARTICLE | 204 |
2016-11 | High-performance shape-engineerable thermoelectric painting | Park, Sung Hoon; Jo, Seungki; Kwon, Beomjin; Kim, Frederick; Ban, Hyeong Woo; Lee, Ji Eun; Gu, Da Hwi; Lee, Se Hwa; Hwang, Younghun; Kim, Jin-Sang; Hyun, Dow-Bin; Lee, Sukbin; Choi, Kyoung Jin; Jo, Wook; Son, Jae Sung | ARTICLE | 845 |