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Magneto-transport properties of MnGeP2 ferromagnetic semiconductor
- Author(s)
- Choi, Jeongyong, Hwang, Younghun, Choi, Sungyoul, Hong, Soon Cheol, Cho, Sunglae
- Issued Date
- 2007-03
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.310, no.2, pp.2117 - 2119
- Abstract
- We have studied the magneto-transport properties of a chalcopyrite MnGeP2 thin film grown on GaAs(1 0 0) by molecular beam epitaxy (MBE). The temperature dependent resistance results strongly support the presence of ferromagnetic phase transition around 320 K. On the other hand, it shows an anomalous Hall effect in p-type MnGeP2 thin film, indicating the presence of spin-polarized hole carriers in MnGeP2, which may be useful for the spintronic devices.
- Publisher
- ELSEVIER SCIENCE BV
- ISSN
- 0304-8853
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