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Electronic and optical properties in ZnO:Ga thin films induced by substrate stress

Author(s)
Hwang, YounghunAhn, HeejinKang, ManilUm, younghoPark, Hyoyeol
Issued Date
2015-07
DOI
10.1016/j.jpcs.2015.07.012
URI
https://scholarworks.unist.ac.kr/handle/201301/21411
Fulltext
http://www.sciencedirect.com/science/article/pii/S0022369715300184
Citation
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.87, pp.122 - 127
Abstract
The effects of biaxial stress in ZnO:Ga thin films on different substrates, e.g., sapphire(0001), quartz, Si(001), and glass have been investigated by X-ray diffraction, atomic force microscopy, and electrical transport and ellipsometric measurements. A strong dependence of orientation, crystallite size, transport, and electronic properties upon the substrate-induced stress has been found. The structural properties indicate that a tensile stress exists in epitaxial ZnO:Ga films grown on sapphire, Si, and quartz, while a compressive stress appears in films grown on glass. The resistivity of the films decreased with increasing biaxial stress, which is inversely proportional to the product of the carrier concentration and Hall mobility. The refractive index n was found to decrease with increasing biaxial stress, while the optical band gap E0 increased with stress. These behaviors are attributed to lattice contraction and the increase in the carrier concentration that is induced by the stress. Our experimental data suggest that the mechanism of substrate-induced stress is important for understanding the properties of ZnO:Ga thin films and for the fabrication of devices which use these materials.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
ISSN
0022-3697

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