Formation and ferromagnetic properties of FeSi thin films

Abstract

In this work, the growth and ferromagnetic properties of -FeSi thin film on Si(100) substrate prepared by molecular beam epitaxy are reported. The inter-diffusion of Fe layer on Si(100) substrate at 600 °C results in polycrystalline -FeSi layer. The determined activation energy was 0.044 eV. The modified magnetism from paramagnetic in bulk to ferromagnetic states in -FeSi thin films was observed. The saturated magnetization and coercive field of -FeSi film are 4.6 emu/cm3 and 29 Oe at 300 K, respectively.