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Growth of InN and InGaN quantum dots on GaN by low-pressure metalorganic chemical vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2003-05-25 View37

The growth of InN/GaN single quantum well by metalorganic chemical vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2003-05-25 View42

Effect of growth interruption on InN/GaN single quantum well structures

Kwon, Soon-Yong

Conference Paper Issue Date2003-05-25 View34

The Formation of SiGe Nanocrystals and Control Gate Oxide Through the Oxidation of Thin Amorphous Si0.7Ge0.3 Layer and Its Electrical Properties

Yoon, Tae-Sik

Conference Paper Issue Date2003-04-22 View37

Self-Assembled Monolayer Formation of Nanoparticles by Adsorption Process

Yoon, Tae-Sik

Conference Paper Issue Date2003-04-22 View36

Reduction of In composition with the increase of the TBAs flow rate during InGaNAs/GaN multiquantum well by metalorganic vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2003-02-01 View44

Growth and 3-dimensional shape evolution of InN quantum structure by metalorganic chemical vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2003-02-01 View29

Emission properties of InGaN/GaN double heterostructures and multiple quantum wells by metalorganic chemical vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2002-08-01 View34

The effect of ammonia preheating on yellow luminescence in gallium nitride

Kwon, Soon-Yong

Conference Paper Issue Date2002-08-01 View28

Reduction of Gallium Vacancy Concentration in Gallium Nitride Grown with Preheated Ammonia

Kwon, Soon-Yong

Conference Paper Issue Date2002-07-22 View31

Effect of In incorporation on PL characteristic of InGaN/GaN MQWs grown by metalorganic chemical vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2002-06-03 View37

Growth of InGaN/GaN multiple quantum wells by metal-organic chemical vapor deposition and their structural and optoelectronic proeprties

Kwon, Soon-Yong

Conference Paper Issue Date2002-05-01 View33

Ge-rich Si1-XGeX nanocrystal formation by the oxidation of As-deposited thin amorphous Si0.7Ge0.3 layer File

Yoon, Tae-Sik , Kim, K.-B.

Conference Paper Issue Date2002-04-03 View79

Effect of In incorporation on PL characteristic of InGaN/GaN MQWs grown bu metalorganic chemical vapor deposition

Kwon, Soon-Yong

Conference Paper Issue Date2002-02-01 View30

Photoluminescence study of blue luminescence from undoped GaN grown by MOCVD

Kwon, Soon-Yong

Conference Paper Issue Date2001-10-01 View42

Growth of high-quality GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectric properties

Kwon, Soon-Yong

Conference Paper Issue Date2001-07-16 View29

Effect of growth temperature and V/III ratio on fluctuation of indium composition within InGaN/GaN multi-quantum wells

Kwon, Soon-Yong

Conference Paper Issue Date2001-02-01 View29

Nanocrystals Formation and Microstructure Evolution of Amorphous Si and Si0.7Ge0.3 by Using Low Pressure Chemical Vapor Deposition

Yoon, Tae-Sik , Lee, D.-H. , Kwon, J.-Y. , Kim, K.-B. , Min, S.-H.

Conference Paper Issue Date2000-05-14 View60

In-situ, real time thickness monitoring of GaN growth by spectral refelectance

Kwon, Soon-Yong

Conference Paper Issue Date2000-01-01 View31

Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Chae, Dong-Hyuk , Yoon, Tae-Sik , Kim, Dae Hwan , Kwon, Jang-Yeon , Kim, Ki-Bum , Lee, Jong Duk , Park, Byung-Gook

Conference Paper Issue Date1999-06-30 View62

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