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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature
- Author(s)
- Chae, Dong-Hyuk, Yoon, Tae-Sik, Kim, Dae Hwan, Kwon, Jang-Yeon, Kim, Ki-Bum, Lee, Jong Duk, Park, Byung-Gook
- Issued Date
- 1999-06-30
- Citation
- 57th Annual Device Research Conference Digest , pp.140 - 141
- Abstract
- A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.
- Publisher
- IEEE, Piscataway, NJ, United States
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