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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
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Growth of high-quality GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectric properties

Author(s)
Kwon, Soon-Yong
Issued Date
2001-07-16
URI
https://scholarworks.unist.ac.kr/handle/201301/47231
Citation
The 4th International Conference on Nitride Semiconductors (ICNS-4)
Publisher
MRS; IEEE; EDS

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