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A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)
- Author(s)
- Geum, Dae-Myeong, Lim, Jinha, Jang, Junho, Ahn, Seungyeop, Kim, SeongKwang, Shim, Joonsup, Kim, Bong Ho, Park, Juhyuk, Baek, Woo Jin, Jeong, Jaeyong, Kim, Sanghyeon
- Issued Date
- 2022-06-12
- Citation
- IEEE Symposium on VLSI Technology
- Abstract
- A sub-micron-thick InGaAs photodetectors (PDs) with a broad spectrum coverage (400-1700 nm) and high external quantum efficiency (EQE) (>70%) were successfully demonstrated through guided-mode resonance structure and surface layer thinning process. It showed the outstanding EQE of 83.8%, and 65.5% at 1000 nm, 1550 nm for 500-nm-thick InGaAs absorption layer, respectively. Compared to previous results, thickness reduction by 6.8 times and comparable QE were simultaneously achieved.
- Publisher
- IEEE
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