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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.title | IEEE Symposium on VLSI Technology | - |
| dc.contributor.author | Geum, Dae-Myeong | - |
| dc.contributor.author | Lim, Jinha | - |
| dc.contributor.author | Jang, Junho | - |
| dc.contributor.author | Ahn, Seungyeop | - |
| dc.contributor.author | Kim, SeongKwang | - |
| dc.contributor.author | Shim, Joonsup | - |
| dc.contributor.author | Kim, Bong Ho | - |
| dc.contributor.author | Park, Juhyuk | - |
| dc.contributor.author | Baek, Woo Jin | - |
| dc.contributor.author | Jeong, Jaeyong | - |
| dc.contributor.author | Kim, Sanghyeon | - |
| dc.date.accessioned | 2026-03-27T14:02:59Z | - |
| dc.date.available | 2026-03-27T14:02:59Z | - |
| dc.date.created | 2026-03-26 | - |
| dc.date.issued | 2022-06-12 | - |
| dc.description.abstract | A sub-micron-thick InGaAs photodetectors (PDs) with a broad spectrum coverage (400-1700 nm) and high external quantum efficiency (EQE) (>70%) were successfully demonstrated through guided-mode resonance structure and surface layer thinning process. It showed the outstanding EQE of 83.8%, and 65.5% at 1000 nm, 1550 nm for 500-nm-thick InGaAs absorption layer, respectively. Compared to previous results, thickness reduction by 6.8 times and comparable QE were simultaneously achieved. | - |
| dc.identifier.bibliographicCitation | IEEE Symposium on VLSI Technology | - |
| dc.identifier.doi | 10.1109/VLSITechnologyandCir46769.2022.9830388 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/91134 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/abstract/document/9830388 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%) | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2022-06-12 | - |
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