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IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs
- Author(s)
- Kim, Bong Ho, Kim, Seong Kwang, Kuk, Song-hyeon, Suh, Yoon-Je, Jeong, Jaeyong, Kim, Joon Pyo, Geum, Dae-Myeong, Kim, Sanghyeon
- Issued Date
- 2023-12-09
- Citation
- IEEE International Electron Devices Meeting
- Abstract
- We investigated the effects of interfacial layer scavenging on the performance and reliability of HZO-based ferroelectric field-effect transistors (FeFETs). IL scavenging effectively reduced operating voltage and improved endurance/retention characteristics. The sub-loop operation and recovery strategies are proposed to extend the endurance characteristics of FeFETs. The results provide insights into the degradation/recovery mechanisms of gate stacks in FeFETs and highlight the importance of recovery speed and controlled IL.
- Publisher
- IEEE
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