IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs

Abstract

We investigated the effects of interfacial layer scavenging on the performance and reliability of HZO-based ferroelectric field-effect transistors (FeFETs). IL scavenging effectively reduced operating voltage and improved endurance/retention characteristics. The sub-loop operation and recovery strategies are proposed to extend the endurance characteristics of FeFETs. The results provide insights into the degradation/recovery mechanisms of gate stacks in FeFETs and highlight the importance of recovery speed and controlled IL.