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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.title | IEEE International Electron Devices Meeting | - |
| dc.contributor.author | Kim, Bong Ho | - |
| dc.contributor.author | Kim, Seong Kwang | - |
| dc.contributor.author | Kuk, Song-hyeon | - |
| dc.contributor.author | Suh, Yoon-Je | - |
| dc.contributor.author | Jeong, Jaeyong | - |
| dc.contributor.author | Kim, Joon Pyo | - |
| dc.contributor.author | Geum, Dae-Myeong | - |
| dc.contributor.author | Kim, Sanghyeon | - |
| dc.date.accessioned | 2026-03-27T14:02:52Z | - |
| dc.date.available | 2026-03-27T14:02:52Z | - |
| dc.date.created | 2026-03-26 | - |
| dc.date.issued | 2023-12-09 | - |
| dc.description.abstract | We investigated the effects of interfacial layer scavenging on the performance and reliability of HZO-based ferroelectric field-effect transistors (FeFETs). IL scavenging effectively reduced operating voltage and improved endurance/retention characteristics. The sub-loop operation and recovery strategies are proposed to extend the endurance characteristics of FeFETs. The results provide insights into the degradation/recovery mechanisms of gate stacks in FeFETs and highlight the importance of recovery speed and controlled IL. | - |
| dc.identifier.bibliographicCitation | IEEE International Electron Devices Meeting | - |
| dc.identifier.doi | 10.1109/IEDM45741.2023.10413731 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/91129 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/abstract/document/10413731 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2023-12-09 | - |
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