Electrical Analysis for Wafer-Bonded Interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs

Abstract

We systematically investigated the wafer- bonded interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/ n(+)InGaAs by using a circular transmission line method (CTLM) for the increased extraction accuracy. Based on the low-temperature bonding process at 50 degrees C, the bonded interfaces were successfully fabricated without degradation of the material quality. While the fabricated devices exhibited the linearly increased resistance as a function of channel distances, the p(+)InGaAs/n(+)InGaAs structure revealed the improved interfacial resistivity of 3.9 x 10(-3) Omega center dot cm(2) compared with 3.3x10(-2) Omega center dot cm(2) of the p(+)GaAs/n(+)InGaAs. Since these values suggested good electrical properties in wafer-bonded structures, the developed wafer-bonded interfaces could be a good approach for integrating electronic and optoelectronic devices.