Robust Disturb Immunity in AND-Type 1T FeFET Arrays by Electron Detrapping Mode

Abstract

This work demonstrates robust disturb immunity in and-type 1T ferroelectric field-effect transistor (FeFET) arrays enabled by the electron detrapping (ED) mode. The ED mode suppresses hole injection (HI) from the body and induces sharp ferroelectric switching. Consequently, the ED mode significantly reduces write disturb and achieves complete immunity to read disturb, with stable memory states maintained up to 10(10) disturb cycles. These results underscore the ED mode as a robust device-level strategy to enhance disturb immunity in FeFET arrays, paving the way toward reliable embedded nonvolatile memory (NVM) applications.