Effective Recovery Operation in FeFETs via Suppression of Hole Injection

Abstract

This work demonstrates that controlling the amplitude asymmetry of write pulses can effectively modulate degradation and recovery behaviors in Hf0.5Zr0.5O2 (HZO)-based ferroelectric field-effect transistors (FeFETs). Positive write (PW) scheme suppressed trap generation and achieved a high recovery rate of 98% at a memory window (MW) of 0.5 V, compared with 62% for the negative write (NW) pulse scheme. Furthermore, incorporating the electron detrapping (ED) mode operation with the PW scheme enabled a 91% recovery rate at a large MW of 1.2 V. These results highlight the critical role of suppressing hole-related degradation for effective and robust recovery operation in FeFETs.