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dc.citation.title IEEE TRANSACTIONS ON ELECTRON DEVICES -
dc.contributor.author Kim, Bong Ho -
dc.contributor.author Kuk, Song-Hyeon -
dc.contributor.author Hwang, Hyeon-Seong -
dc.contributor.author Jeong, Jaeyong -
dc.contributor.author Park, Youngkeun -
dc.contributor.author Suh, Yoon-Je -
dc.contributor.author Kim, Joon Pyo -
dc.contributor.author Lee, Chan Jik -
dc.contributor.author Cho, Byung Jin -
dc.contributor.author Kim, Sang Hyeon -
dc.date.accessioned 2026-03-26T10:42:00Z -
dc.date.available 2026-03-26T10:42:00Z -
dc.date.created 2026-03-24 -
dc.date.issued 2026-03 -
dc.description.abstract This work demonstrates that controlling the amplitude asymmetry of write pulses can effectively modulate degradation and recovery behaviors in Hf0.5Zr0.5O2 (HZO)-based ferroelectric field-effect transistors (FeFETs). Positive write (PW) scheme suppressed trap generation and achieved a high recovery rate of 98% at a memory window (MW) of 0.5 V, compared with 62% for the negative write (NW) pulse scheme. Furthermore, incorporating the electron detrapping (ED) mode operation with the PW scheme enabled a 91% recovery rate at a large MW of 1.2 V. These results highlight the critical role of suppressing hole-related degradation for effective and robust recovery operation in FeFETs. -
dc.identifier.bibliographicCitation IEEE TRANSACTIONS ON ELECTRON DEVICES -
dc.identifier.doi 10.1109/TED.2026.3670290 -
dc.identifier.issn 0018-9383 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/90846 -
dc.identifier.url https://ieeexplore.ieee.org/abstract/document/11447438 -
dc.identifier.wosid 001719671700001 -
dc.language 영어 -
dc.publisher IEEE -
dc.title Effective Recovery Operation in FeFETs via Suppression of Hole Injection -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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