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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

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dc.contributor.author Choi, Kyoung Jin ko
dc.contributor.author Lee, JL ko
dc.date.available 2014-10-24T00:11:11Z -
dc.date.created 2014-10-22 ko
dc.date.issued 2001-05 -
dc.identifier.citation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.19, no.3, pp.615 - 621 ko
dc.identifier.issn 1071-1023 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7705 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0035326449 ko
dc.description.abstract Capacitance deep-level transient spectroscopy (DLTS) was used to study surface states on aluminum compounds. Two hole-like traps were observed in pseudomorphic high-electron-mobility transistor with a multifinger gate. No hole-like signals were observed in the DLTS spectra of the fat field-effect transistor (FATFET) having negligible ratio of the ungated surface to the total area between the source and the drain. The activation energies of both surface states were measured to be 0.50±0.03 and 0.81±0.01 eV. ko
dc.description.statementofresponsibility open -
dc.language ENG ko
dc.publisher A V S AMER INST PHYSICS ko
dc.subject ELECTRON-MOBILITY TRANSISTOR ko
dc.subject MOLECULAR-BEAM EPITAXY ko
dc.subject GAAS-MESFETS ko
dc.subject TRANSCONDUCTANCE DISPERSION ko
dc.subject CARRIER CAPTURE ko
dc.subject DLTS SPECTRA ko
dc.subject TRAPS ko
dc.subject SEMICONDUCTORS ko
dc.title Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-0035326449 ko
dc.identifier.wosid 000169366600003 ko
dc.type.rims ART ko
dc.description.wostc 6 *
dc.description.scopustc 6 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-22 *
dc.identifier.doi 10.1116/1.1368679 ko
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