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DC Field | Value | Language |
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dc.citation.endPage | 698 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 695 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 46 | - |
dc.contributor.author | Jeon, CM | - |
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Bae, SB | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2023-12-22T11:38:21Z | - |
dc.date.available | 2023-12-22T11:38:21Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2002-05 | - |
dc.description.abstract | AlGaN/GaN heterostructure field effect transistor (HFET) with the room-temperature ohmic contact (1.0 x 10(-4) Omegacm(2)) was demonstrated through the surface treatment using N-2 inductively coupled plasma. The N-2 plasma produced N vacancies on the surface of undoped AlGaN, leading to ohmic contact at as-deposited state, The fabricated HFET exhibited the saturation drain current density of 736 mA/mm and transconductance of 148 mS/mm. This room-temperature ohmic contact was suitable for fabrication of AlGaN/GaN HFET. | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.46, no.5, pp.695 - 698 | - |
dc.identifier.doi | 10.1016/S0038-1101(01)00325-2 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.scopusid | 2-s2.0-0036568213 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7701 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036568213 | - |
dc.identifier.wosid | 000175658000014 | - |
dc.language | 영어 | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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