dc.citation.endPage |
698 |
- |
dc.citation.number |
5 |
- |
dc.citation.startPage |
695 |
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dc.citation.title |
SOLID-STATE ELECTRONICS |
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dc.citation.volume |
46 |
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dc.contributor.author |
Jeon, CM |
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dc.contributor.author |
Jang, HW |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Bae, SB |
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dc.contributor.author |
Lee, JH |
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dc.contributor.author |
Lee, JL |
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dc.date.accessioned |
2023-12-22T11:38:21Z |
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dc.date.available |
2023-12-22T11:38:21Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
2002-05 |
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dc.description.abstract |
AlGaN/GaN heterostructure field effect transistor (HFET) with the room-temperature ohmic contact (1.0 x 10(-4) Omegacm(2)) was demonstrated through the surface treatment using N-2 inductively coupled plasma. The N-2 plasma produced N vacancies on the surface of undoped AlGaN, leading to ohmic contact at as-deposited state, The fabricated HFET exhibited the saturation drain current density of 736 mA/mm and transconductance of 148 mS/mm. This room-temperature ohmic contact was suitable for fabrication of AlGaN/GaN HFET. |
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dc.identifier.bibliographicCitation |
SOLID-STATE ELECTRONICS, v.46, no.5, pp.695 - 698 |
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dc.identifier.doi |
10.1016/S0038-1101(01)00325-2 |
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dc.identifier.issn |
0038-1101 |
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dc.identifier.scopusid |
2-s2.0-0036568213 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7701 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036568213 |
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dc.identifier.wosid |
000175658000014 |
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dc.language |
영어 |
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dc.publisher |
PERGAMON-ELSEVIER SCIENCE LTD |
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dc.title |
Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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