dc.citation.endPage |
2899 |
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dc.citation.number |
5A |
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dc.citation.startPage |
2894 |
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dc.citation.title |
JAPANESE JOURNAL OF APPLIED PHYSICS |
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dc.citation.volume |
41 |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Moon, JK |
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dc.contributor.author |
Park, M |
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dc.contributor.author |
Kim, HC |
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dc.contributor.author |
Lee, JL |
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dc.date.accessioned |
2023-12-22T11:38:20Z |
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dc.date.available |
2023-12-22T11:38:20Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
2002-05 |
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dc.description.abstract |
Effects of photowashing treatment on gate leakage current (I-GD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of I-GD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of I-GD. |
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dc.identifier.bibliographicCitation |
JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.5A, pp.2894 - 2899 |
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dc.identifier.doi |
10.1143/JJAP.41.2894 |
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dc.identifier.issn |
0021-4922 |
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dc.identifier.scopusid |
2-s2.0-0036578349 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7699 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036578349 |
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dc.identifier.wosid |
000176515700019 |
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dc.language |
영어 |
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dc.publisher |
JAPAN SOC APPLIED PHYSICS |
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dc.title |
Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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