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DC Field | Value | Language |
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dc.citation.endPage | 2899 | - |
dc.citation.number | 5A | - |
dc.citation.startPage | 2894 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 41 | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Moon, JK | - |
dc.contributor.author | Park, M | - |
dc.contributor.author | Kim, HC | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2023-12-22T11:38:20Z | - |
dc.date.available | 2023-12-22T11:38:20Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2002-05 | - |
dc.description.abstract | Effects of photowashing treatment on gate leakage current (I-GD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of I-GD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of I-GD. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.41, no.5A, pp.2894 - 2899 | - |
dc.identifier.doi | 10.1143/JJAP.41.2894 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-0036578349 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7699 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036578349 | - |
dc.identifier.wosid | 000176515700019 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Effects of photowashing treatment on gate leakage current of GaAs metal-semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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