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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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dc.citation.endPage 1577 -
dc.citation.number 4 -
dc.citation.startPage 1574 -
dc.citation.title JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B -
dc.citation.volume 20 -
dc.contributor.author Choi, Kyoung Jin -
dc.contributor.author Jeon, CM -
dc.contributor.author Jang, HW -
dc.contributor.author Lee, JL -
dc.date.accessioned 2023-12-22T11:37:31Z -
dc.date.available 2023-12-22T11:37:31Z -
dc.date.created 2014-10-22 -
dc.date.issued 2002-07 -
dc.description.abstract The changes in atomic composition and surface states at the surface of AlGaN caused by photowashing treatment were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of surface treatment on the electrical properties of AlGaN/GaN HFETs was examined by both current-voltage (I-V) and transconductance dispersion measurements. From these, the origin of changes in electrical properties caused by the photowashing treatment was proposed. -
dc.identifier.bibliographicCitation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.20, no.4, pp.1574 - 1577 -
dc.identifier.doi 10.1116/1.1491554 -
dc.identifier.issn 1071-1023 -
dc.identifier.scopusid 2-s2.0-0035982590 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7698 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0035982590 -
dc.identifier.wosid 000177510500051 -
dc.language 영어 -
dc.publisher A V S AMER INST PHYSICS -
dc.title Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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