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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | G47 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | G45 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Jeon, CM | - |
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Bae, SB | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2023-12-22T11:37:31Z | - |
dc.date.available | 2023-12-22T11:37:31Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2002-07 | - |
dc.description.abstract | Room-temperature Ti/Al ohmic contact on undoped AlGaN/GaN heterostructure was demonstrated through surface treatment using N-2 inductively coupled plasma. The specific contact resistivity was reduced from Schottky behavior to 1.02 x 10(-4) Omega cm(2) by the treatment. Increases in Ga-N binding energy and production of metallic Ga and Al conducting layers were found at the treated surface. This indicates that N vacancies, acting as donors for electrons, were produced at the treated surface, resulting in a shift of the Fermi level to near the conduction band, via the formation of ohmic contact. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.7, pp.G45 - G47 | - |
dc.identifier.doi | 10.1149/1.1479296 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-0036644172 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7697 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036644172 | - |
dc.identifier.wosid | 000175932300013 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N-2 inductively coupled plasma | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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