dc.citation.endPage |
839 |
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dc.citation.number |
3 |
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dc.citation.startPage |
835 |
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dc.citation.title |
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS |
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dc.citation.volume |
234 |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Jang, HW |
- |
dc.contributor.author |
Lee, JL |
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dc.date.accessioned |
2023-12-22T11:36:26Z |
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dc.date.available |
2023-12-22T11:36:26Z |
- |
dc.date.created |
2014-10-22 |
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dc.date.issued |
2002-12 |
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dc.description.abstract |
Inductively-coupled-plasma (ICP) damage on n-type GaN was characterized using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy. A new electron trap, localized near the contact, as well as a pre-existing trap was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. The Fermi energy level shifted to the conduction band minimum due to the generation Of V-N. From these, the origin of T2 was suggested to be V-N or V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current. |
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dc.identifier.bibliographicCitation |
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.234, no.3, pp.835 - 839 |
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dc.identifier.doi |
10.1002/1521-3951(200212)234:3<835::AID-PSSB835>3.0.CO;2-4 |
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dc.identifier.issn |
0370-1972 |
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dc.identifier.scopusid |
2-s2.0-0036920664 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7695 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036920664 |
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dc.identifier.wosid |
000180038200032 |
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dc.language |
영어 |
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dc.publisher |
WILEY-V C H VERLAG GMBH |
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dc.title |
Characterization of inductively-coupled-plasma damage on n-type GaN using deep-level transient spectroscopy and synchrotron radiation photoemission spectroscopy |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
- |