dc.citation.endPage |
1235 |
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dc.citation.number |
8 |
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dc.citation.startPage |
1233 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
82 |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Jang, HW |
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dc.contributor.author |
Lee, JL |
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dc.date.accessioned |
2023-12-22T11:14:11Z |
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dc.date.available |
2023-12-22T11:14:11Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
2003-02 |
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dc.description.abstract |
The effects of inductively coupled plasma (ICP) etching on electrical properties of n-type GaN Schottky contacts were investigated by observing ion damage using deep-level transient spectroscopy. An electron trap, not previously seen, localized near the contact, as well as a pre-existing trap, was observed in the ICP-etched sample. The ICP-etched surface was found to be N-deficient, which means that N vacancies (V-N) were produced by ICP etching. From these, the origin of the ICP-induced electron trap was suggested to be V-N or a V-N-related complex of point defects. The ICP-induced traps provided a path for the transport of electrons, leading to the reduction of Schottky barrier height and increase of gate leakage current. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.82, no.8, pp.1233 - 1235 |
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dc.identifier.doi |
10.1063/1.1557316 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-0037463335 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7691 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037463335 |
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dc.identifier.wosid |
000181066000031 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
- |