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- Kim, Soo-Hyun
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The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique
- Author(s)
- Kim, Doyoung, Kim, Soo-Hyun, Kim, Hyungjun
- Issued Date
- 2015-01
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.29, pp.139 - 142
- Abstract
- We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis (dimethylamino) dimethylsilane ( BDMADMS) and a hydrogen plasma. ASiN(x)C(y) sealing layer grown by PE-ALD was formed without any penetration of the pores with in the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material. (C) 2014 Elsevier Ltd. All rights reserved.
- Publisher
- ELSEVIER SCI LTD
- ISSN
- 1369-8001
- Keyword (Author)
- SiNxCy, Sealing layer, Atomic layer deposition, Dielectric constant, Low-k material
- Keyword
- LOW-K, VAPOR-DEPOSITION, BARRIER PROPERTIES, CONSTANT POLYMERS, FILMS, TAN, CU
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