The formation of a dielectric SiNxCy sealing layer using an atomic layer deposition technique

Abstract

We investigated the growth of a SiNxCy dielectric sealing layer on a porous low dielectric constant (low-k) substrate using plasma-enhanced atomic layer deposition (PE-ALD). A porous low-k substrate was repeatedly exposed to bis (dimethylamino) dimethylsilane ( BDMADMS) and a hydrogen plasma. ASiN(x)C(y) sealing layer grown by PE-ALD was formed without any penetration of the pores with in the porous low dielectric substrate. Our technique provides for the deposition of a dielectric sealing layer that prevents pore penetration of a low-k material. (C) 2014 Elsevier Ltd. All rights reserved.