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최경진

Choi, Kyoung Jin
Energy Conversion Materials Lab.
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Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration

Author(s)
Shin, Jae CheolLee, AriMohseni, Parsian KatalKim, Do YangYu, LanKim, Jae HunKim, Hyo JinChoi, Won JunWasserman, DanielChoi, Kyoung JinLi, Xiuling
Issued Date
2013-06
DOI
10.1021/nn4014774
URI
https://scholarworks.unist.ac.kr/handle/201301/3930
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879644256
Citation
ACS NANO, v.7, no.6, pp.5463 - 5471
Abstract
One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 10 8/cm2). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices.
Publisher
AMER CHEMICAL SOC
ISSN
1936-0851
Keyword (Author)
MOCVDInAsyP1-ynanowireIII-V semiconductorheterojunction
Keyword
TERNARY INGAAS NANOWIRESSOLAR-CELLSOPTICAL-PROPERTIESGROWTHGAASPERFORMANCELITHOGRAPHYDENSITY

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