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DC Field | Value | Language |
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dc.citation.endPage | 5471 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 5463 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Shin, Jae Cheol | - |
dc.contributor.author | Lee, Ari | - |
dc.contributor.author | Mohseni, Parsian Katal | - |
dc.contributor.author | Kim, Do Yang | - |
dc.contributor.author | Yu, Lan | - |
dc.contributor.author | Kim, Jae Hun | - |
dc.contributor.author | Kim, Hyo Jin | - |
dc.contributor.author | Choi, Won Jun | - |
dc.contributor.author | Wasserman, Daniel | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Li, Xiuling | - |
dc.date.accessioned | 2023-12-22T03:46:19Z | - |
dc.date.available | 2023-12-22T03:46:19Z | - |
dc.date.created | 2013-08-28 | - |
dc.date.issued | 2013-06 | - |
dc.description.abstract | One-dimensional crystal growth allows the epitaxial integration of compound semiconductors on silicon (Si), as the large lattice-mismatch strain arising from heterointerfaces can be laterally relieved. Here, we report the direct heteroepitaxial growth of a mixed anion ternary InAsyP1-y nanowire array across an entire 2 in. Si wafer with unprecedented spatial, structural, and special uniformity across the entire 2 in. wafer and dramatic improvements in aspect ratio (>100) and area density (>5 × 10 8/cm2). Heterojunction solar cells consisting of n-type InAsyP1-y (y = 0.75) and p-type Si achieve a conversion efficiency of 3.6% under air mass 1.5 illumination. This work demonstrates the potential for large-scale production of these nanowires for heterogeneous integration of optoelectronic devices. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.7, no.6, pp.5463 - 5471 | - |
dc.identifier.doi | 10.1021/nn4014774 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-84879644256 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/3930 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84879644256 | - |
dc.identifier.wosid | 000321093800084 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Wafer-Scale Production of Uniform InAsyP1-y Nanowire Array on Silicon for Heterogeneous Integration | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | InAsyP1-y | - |
dc.subject.keywordAuthor | nanowire | - |
dc.subject.keywordAuthor | III-V semiconductor | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordPlus | TERNARY INGAAS NANOWIRES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | DENSITY | - |
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