File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Choi, Kyoung Jin
- Energy Conversion Materials Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS
- Author(s)
- Shin, Jae Cheol, Kim, Do Yang, Park, Jae Hyung, Oh, Si Duck, Ko, Hang Ju, Han, Myung Soo, Kim, Jae Hun, Choi, Kyoung Jin, Kim, Hyo Jin
- Issued Date
- 2013-05
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3511 - 3514
- Abstract
- We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- ISSN
- 1533-4880
- Keyword (Author)
- InxGa1-xAs, Nanowires, Vapor-Liquid-Solid, MOCVD
- Keyword
- ARRAYS
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.