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DC Field | Value | Language |
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dc.citation.endPage | 3514 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3511 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 13 | - |
dc.contributor.author | Shin, Jae Cheol | - |
dc.contributor.author | Kim, Do Yang | - |
dc.contributor.author | Park, Jae Hyung | - |
dc.contributor.author | Oh, Si Duck | - |
dc.contributor.author | Ko, Hang Ju | - |
dc.contributor.author | Han, Myung Soo | - |
dc.contributor.author | Kim, Jae Hun | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Kim, Hyo Jin | - |
dc.date.accessioned | 2023-12-22T04:06:53Z | - |
dc.date.available | 2023-12-22T04:06:53Z | - |
dc.date.created | 2013-07-05 | - |
dc.date.issued | 2013-05 | - |
dc.description.abstract | We have characterized the structural properties of the ternary In xGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 × 108/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa 1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW. | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3511 - 3514 | - |
dc.identifier.doi | 10.1166/jnn.2013.7301 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.scopusid | 2-s2.0-84876950111 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/3474 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84876950111 | - |
dc.identifier.wosid | 000319953300064 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS | - |
dc.type | Article | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | InxGa1-xAs | - |
dc.subject.keywordAuthor | Nanowires | - |
dc.subject.keywordAuthor | Vapor-Liquid-Solid | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordPlus | ARRAYS | - |
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