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심교승

Sim, Kyoseung
Organic Soft Electronics and System Lab.
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Electrical responses of short-channel organic transistor prepared by solution-processed organic crystal wire mask

Author(s)
Na, HanahCho, HyejinSim, KyoseungShim, HyunseokKim, Sung-JinPyo, Seungmoon
Issued Date
2014-11
DOI
10.1016/j.orgel.2014.07.031
URI
https://scholarworks.unist.ac.kr/handle/201301/31597
Fulltext
https://www.sciencedirect.com/science/article/pii/S1566119914003061
Citation
ORGANIC ELECTRONICS, v.15, no.11, pp.2728 - 2733
Abstract
We report a formation of a solution-grown single crystal wire mask for the fabrication of short-channel organic field-effect transistor with enhanced dynamic response time. The various channel length, ranging from submicrometer to a few micrometers, were obtained by controlling the concentration of solution and processing conditions. We fabricated p-and n-channel bottom-contact organic field-effect transistors using pentacene and PTCDI-C-13, respectively, and static and dynamic electrical characteristics of the devices were investigated. The highest and average field-effect hole mobility values were found to be 0.892 cm(2)/V s and 0.192 cm(2)/V s, respectively. The load type inverter based on the short-channel transistor connected with a 2 M Omega resistor showed a clear switching response when square wave input signals up to 1 kHz were applied at V-DD = -60 V. (C) 2014 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER
ISSN
1566-1199
Keyword (Author)
Organic field-effect transistorShort-channel transistorOrganic semiconductorDynamic response
Keyword
THIN-FILM TRANSISTORSFIELD-EFFECT TRANSISTORSHIGH-PERFORMANCEFABRICATION

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