Electrical responses of short-channel organic transistor prepared by solution-processed organic crystal wire mask

Abstract

We report a formation of a solution-grown single crystal wire mask for the fabrication of short-channel organic field-effect transistor with enhanced dynamic response time. The various channel length, ranging from submicrometer to a few micrometers, were obtained by controlling the concentration of solution and processing conditions. We fabricated p-and n-channel bottom-contact organic field-effect transistors using pentacene and PTCDI-C-13, respectively, and static and dynamic electrical characteristics of the devices were investigated. The highest and average field-effect hole mobility values were found to be 0.892 cm(2)/V s and 0.192 cm(2)/V s, respectively. The load type inverter based on the short-channel transistor connected with a 2 M Omega resistor showed a clear switching response when square wave input signals up to 1 kHz were applied at V-DD = -60 V. (C) 2014 Elsevier B.V. All rights reserved.