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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors

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Title
GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors
Author
Jung, YounghunKim, Sung HyunKim, JihyunWang, XiaotieRen, FanChoi, Kyoung JinPearton, Stephen J.
Keywords
GaN film; GaN-based light-emitting diodes; Growth surfaces; KOH solution; Laser lift-off; Laser lift-off techniques; LED structure; Light-extraction efficiency; Nano-sized; Patterned sapphire substrate; Reflective layers
Issue Date
2012-09
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.5, pp. -
Abstract
GaN-based light-emitting diodes (LEDs) were grown on a patterned sapphire substrate (PSS) containing hemispheres on the growth surface. Free-standing LED structures were obtained by removing the PSS using laser lift-off technique. The N-face GaN surface with micron-sized concave hemisphere structures, which had been located between the sapphire and the GaN film, was then exposed and photo-electrochemically etched using a 2M KOH solution to create nano-sized pyramids. Aluminum was deposited on the roughened N-face GaN as a reflective layer. The roughened aluminum reflectors, consisting of micron-sized hemisphere structures and nano-sized pyramids, enhanced the light extraction efficiency through multiple scattering events of photons and randomized the directions of the photons. The subsequent enhancement in electroluminescence was 13% compared with an untextured control LED.
URI
https://scholarworks.unist.ac.kr/handle/201301/2718
DOI
10.1116/1.4739769
ISSN
0734-2101
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