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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric


GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors

DC Field Value Language Jung, Younghun ko Kim, Sung Hyun ko Kim, Jihyun ko Wang, Xiaotie ko Ren, Fan ko Choi, Kyoung Jin ko Pearton, Stephen J. ko 2014-04-09T08:35:23Z - 2013-06-19 ko 2012-09 -
dc.identifier.citation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.30, no.5, pp. - ko
dc.identifier.issn 0734-2101 ko
dc.identifier.uri ko
dc.description.abstract GaN-based light-emitting diodes (LEDs) were grown on a patterned sapphire substrate (PSS) containing hemispheres on the growth surface. Free-standing LED structures were obtained by removing the PSS using laser lift-off technique. The N-face GaN surface with micron-sized concave hemisphere structures, which had been located between the sapphire and the GaN film, was then exposed and photo-electrochemically etched using a 2M KOH solution to create nano-sized pyramids. Aluminum was deposited on the roughened N-face GaN as a reflective layer. The roughened aluminum reflectors, consisting of micron-sized hemisphere structures and nano-sized pyramids, enhanced the light extraction efficiency through multiple scattering events of photons and randomized the directions of the photons. The subsequent enhancement in electroluminescence was 13% compared with an untextured control LED. ko
dc.description.statementofresponsibility open -
dc.language ENG ko
dc.publisher A V S AMER INST PHYSICS ko
dc.subject GaN film ko
dc.subject GaN-based light-emitting diodes ko
dc.subject Growth surfaces ko
dc.subject KOH solution ko
dc.subject Laser lift-off ko
dc.subject Laser lift-off techniques ko
dc.subject LED structure ko
dc.subject Light-extraction efficiency ko
dc.subject Nano-sized ko
dc.subject Patterned sapphire substrate ko
dc.subject Reflective layers ko
dc.title GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84865480866 ko
dc.identifier.wosid 000308404900005 ko
dc.type.rims ART ko
dc.description.wostc 3 *
dc.description.scopustc 0 * 2015-02-28 * 2014-07-12 *
dc.identifier.doi 10.1116/1.4739769 ko
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