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A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation File

Kang, Sangbeom , Cho, Woo Yeong , Cho, Beak-Hyung , Lee, Kwang-Jin , Lee, Chang-Soo , Oh, Hyung-Rok , Choi, Byung-Gil , Wang, Qi , Kim, Hye-Jin , Park, Mu-Hui , et al

Article Issue Date2007-01 View96
Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors File

Park, Tae Won , Moon, Jiwon , Shin, Dong Hoon , Kim, Hae Jin , Kim, Seung Soo , Cho, Jea Min , Park, Hyungjun , Woo, Kyung Seok , Kim, Dong Yun , Cheong, Sunwoo , et al

Article Issue Date2024-11 View85
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