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- Jeong, Hongsik
- Future Semiconductor Technology Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 218 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 210 | - |
| dc.citation.title | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
| dc.citation.volume | 42 | - |
| dc.contributor.author | Kang, Sangbeom | - |
| dc.contributor.author | Cho, Woo Yeong | - |
| dc.contributor.author | Cho, Beak-Hyung | - |
| dc.contributor.author | Lee, Kwang-Jin | - |
| dc.contributor.author | Lee, Chang-Soo | - |
| dc.contributor.author | Oh, Hyung-Rok | - |
| dc.contributor.author | Choi, Byung-Gil | - |
| dc.contributor.author | Wang, Qi | - |
| dc.contributor.author | Kim, Hye-Jin | - |
| dc.contributor.author | Park, Mu-Hui | - |
| dc.contributor.author | Ro, Yn Hwan | - |
| dc.contributor.author | Kim, Suyeon | - |
| dc.contributor.author | Ha, Choong-Duk | - |
| dc.contributor.author | Kim, Ki-Sung | - |
| dc.contributor.author | Kim, Young-Ran | - |
| dc.contributor.author | Kim, Du-Eung | - |
| dc.contributor.author | Kwak, Choong-Keun | - |
| dc.contributor.author | Byun, Hyun-Geun | - |
| dc.contributor.author | Jeong, Gitae | - |
| dc.contributor.author | Jeong, Hongsik | - |
| dc.contributor.author | Kim, Kinam | - |
| dc.contributor.author | Shin, YunSueng | - |
| dc.date.accessioned | 2023-12-22T09:37:15Z | - |
| dc.date.available | 2023-12-22T09:37:15Z | - |
| dc.date.created | 2019-07-11 | - |
| dc.date.issued | 2007-01 | - |
| dc.description.abstract | A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal x 2 write and can be increased to similar to 2.67 MB/s with x 16 write. Endurance and retention characteristics are measured to be 10(7) cycles and ten years at 99 degrees C. | - |
| dc.identifier.bibliographicCitation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.42, no.1, pp.210 - 218 | - |
| dc.identifier.doi | 10.1109/JSSC.2006.888349 | - |
| dc.identifier.issn | 0018-9200 | - |
| dc.identifier.scopusid | 2-s2.0-33846204280 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/27155 | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/4039587 | - |
| dc.identifier.wosid | 000243287500023 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | endurance | - |
| dc.subject.keywordAuthor | phase-change memory | - |
| dc.subject.keywordAuthor | phase-change random access memory (PRAM) | - |
| dc.subject.keywordAuthor | reset | - |
| dc.subject.keywordAuthor | retention | - |
| dc.subject.keywordAuthor | burst-read | - |
| dc.subject.keywordAuthor | charge pump | - |
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