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- Chang, Jiwon
- Exploratory Device Research Lab.
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Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
- Author(s)
- Chang, Jiwon
- Issued Date
- 2015-04
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.48, no.14, pp.145101
- Abstract
- Transport properties of about 3 nm channel length monolayer MoX2 (X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) are examined through ballistic full-band quantum transport simulations with atomistic tight-binding Hamiltonians. Our simulations reveal that single gate (SG) monolayer MoX2 MOSFETs with an approximately 2 nm gate underlap exhibit reasonable subthreshold characteristics. From these full-band simulations, we observe channel orientation dependent negative differential resistance (NDR) in the out characteristics in the ballistic transport regime. We discuss and compare NDR properties of monolayer MoX2 n-channel MOSFETs in different transport directions
- Publisher
- IOP PUBLISHING LTD
- ISSN
- 0022-3727
- Keyword (Author)
- transition metal dichalcogenides, ballistic quantum transport, negative differential resistance
- Keyword
- FIELD-EFFECT TRANSISTORS, MOS2 TRANSISTORS, CONTACTS
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