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장지원
Chang, Jiwon(2017-02-06 ~ 2021-03-01)

장지원

전기전자공학과

  • Exploratory Device Research Lab.
  • Website
Research Interests
Non-Conventional Materials;Next-Generation Devices
Lab Description
Since scaling of silicon MOSFETs technology following Moore’s law will eventually encounter fundamental limits in near future, alternative materials to silicon in conventional MOSFETs or even new device concepts based on revolutionary operating schemes are required more than ever. Our lab is dedicated to uncovering pathways to extend Moore’s law by exploring novel materials and devices through various simulations, fabrication and characterizations of nanoscale devices.
Researcher ID Research Gate ORCiD Scopus Google Scholar
Previous
Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition File

Das, Tanmoy , Yang, Eunyeong , Seo, Jae Eun , Kim, Jeong Hyeon , Park, Eunpyo , Kim, Minkyung , Seo, Dongwook , Kwak, Joon Young , Chang, Jiwon

Article Issue Date2021-01 View184
A 2D material-based floating gate device with linear synaptic weight update File

Park, Eunpyo , Kim, Minkyung , Kim, Tae Soo , Kim, In Soo , Park, Jongkil , Kim, Jaewook , Jeong, YeonJoo , Lee, Suyoun , Kim, Inho , Park, Jong-Keuk , et al

Article Issue Date2020-12 View173
Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor File

Kim, Sung-Ho , Park, Jong Yul , Chang, Jiwon , Kim, Kyung Rok

Article Issue Date2020-11 View130
Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2 File

Yang, Eunyeong , Seo, Jae Eun , Seo, Dongwook , Chang, Jiwon

Article Issue Date2020-07 View111
Tunable Current Transport in PdSe2 via Layer-by-Layer Thickness Modulation by Mild Plasma File

Das, Tanmoy , Seo, Dongwook , Seo, Jae Eun , Chang, Jiwon

Article Issue Date2020-05 View104
Theoretical Analysis of Ballistic Current Transport in Monolayer Black Arsenic MOSFETs File

Seo, Jae Eun , Seo, Dongwook , Chang, Jiwon

Article Issue Date2020-02 View126
Tunnelling-based ternary metal–oxide–semiconductor technology File

Jeong, Jae Won , Choi, Young Eun , Kim, Woo Seok , Park, Jee-Ho , Kim, Sunmean , Shin, Sunhae , Lee, Kyuho , Chang, Jiwon , Kim, Seong-Jin , Kim, Kyung Rok

Article Issue Date2019-07 View235
Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene File File

Seo, Dongwook , Chang, Jiwon

Article Issue Date2019-03 View122
Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts File

Sarangapani, Prasad , Weber, Cory , Chang, Jiwon , Cea, Stephen , Povolotskyi, Michael , Klimeck, Gerhard , Kubis, Tillmann

Article Issue Date2018-09 View159
Novel antimonene tunneling field-effect transistors using an abrupt transition from semiconductor to metal in monolayer and multilayer antimonene heterostructures File

Chang, Jiwon

Article Issue Date2018-07 View131
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide File

Valsaraj, Amithraj , Chang, Jiwon , Rai, Amritesh , Register, Leonard F. , Banerjee, Sanjay K.

Article Issue Date2015-12 View111
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation File

Rai, Amritesh , Valsaraj, Amithraj , Movva, Hema C. P. , Roy, Anupam , Ghosh, Rudresh , Sonde, Sushant , Kang, Sangwoo , Chang, Jiwon , Trivedi, Tanuj , Dey, Rik , et al

Article Issue Date2015-07 View194
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors File

Chang, Jiwon

Article Issue Date2015-06 View76
Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs File

Chang, Jiwon

Article Issue Date2015-04 View108
Theoretical study of phosphorene tunneling field effect transistors File

Chang, Jiwon , Hobbs, Chris

Article Issue Date2015-02 View94
Atomistic simulation of the electronic states of adatoms in monolayer MoS2 File

Chang, Jiwon , Larentis, Stefano , Tutuc, Emanuel , Register, Leonard F. , Banerjee, Sanjay K.

Article Issue Date2014-04 View121
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors File

Chang, Jiwon , Register, Leonard F. , Banerjee, Sanjay K.

Article Issue Date2014-02 View78
Atomistic full-band simulations of monolayer MoS2 transistors File

Chang, Jiwon , Register, Leonard F. , Banerjee, Sanjay K.

Article Issue Date2013-11 View78
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors File

Chang, Jiwon , Register, Leonard F. , Banerjee, Sanjay K.

Article Issue Date2012-12 View100
Dielectric capping effects on binary and ternary topological insulator surface states File

Chang, Jiwon , Jadaun, Priyamvada , Register, Leonard F. , Banerjee, Sanjay K. , Sahu, Bhagawan

Article Issue Date2011-10 View81
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